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28LV64SM-6 FICHE TECHNIQUE,CIRCUIT,LA FONCTION

28LV64SM-6 Datasheet PDF

ConstructeurEmballageDescriptionPDFTempérature
Turbo-ICSOICLow voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. 28LV64SM-6 PDF
Min°C | Max°C

  • Turbo-IC 28LV64SC-3
    Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
  • TRBIC 28LV64SC-4
    Speed 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
  • Turbo-IC 28LV64SC-5
    Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
  • TRBIC 28LV64SC-6
    Speed 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
  • TRBIC 28LV64SI-3
    Speed 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
  • Turbo-IC 28LV64SI-4
    Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
  • TRBIC 28LV64SI-5
    Speed 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
  • Turbo-IC 28LV64SI-6
    Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
  • TRBIC 28LV64SM-3
    Speed 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
  • TRBIC 28LV64SM-4
    Speed 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
  • TRBIC 28LV64SM-5
    Speed 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM
  • Turbo-IC 28LV64SM-6
    Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.

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