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2SA542 FICHE TECHNIQUE,CIRCUIT,LA FONCTION

2SA542 Datasheet PDF

Constructeur	Emballage	Description	PDF	Température
Usha		Low frequency amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 250mW.	2SA542 PDF	Min°C \| Max°C

Toshiba 2SA500
(2SAxxx) Transistors
2SA503
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 600MA I(C) | TO-39
2SA504
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-39
Toshiba Semiconductor 2SA505
SILICON EPITAXIAL TYPE(PCT PROCESS)
Toshiba 2SA509
(2SAxxx) Transistors
2SA509GTM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92
2SA509TM
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | TO-92
2SA510
SILICON EPITAXIAL TYPE
Toshiba Semiconductor 2SA512
SILICON EPITAXIAL TYPE
2SA52
Micro Electronics 2SA532
Medium Power Amplifiers Switches
2SA537
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | TO-5
2SA537B
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92
2SA537C
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | TO-92
2SA539
FREQUENCY AMPLIFIER