Semiconductor Fiche technique

BFC52 FICHE TECHNIQUE,CIRCUIT,LA FONCTION

BFC52 Datasheet PDF

ConstructeurEmballageDescriptionPDFTempérature
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.5A I(D) | TO-247AD Min°C | Max°C

  • BFC10
    TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 20.5A I(D) | SOT-227B
  • Seme BFC11
    GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
  • BFC12
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 38A I(D) | SOT-227B
  • Seme BFC13
    GENERATION MOSFET
  • BFC14
    TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 56A I(D) | SOT-227B
  • BFC15
    TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 33A I(D) | SOT-227B
  • Seme BFC16
    GENERATION MOSFET
  • Seme BFC17
    GENERATION MOSFET
  • Seme BFC18
    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • Seme BFC19
    GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
  • Vishay BFC233820102
    Interference Suppression Film Capacitors Radial Potted Type
  • Vishay BFC233820103
    Interference Suppression Film Capacitors Radial Potted Type
  • Vishay BFC233820122
    Interference Suppression Film Capacitors Radial Potted Type
  • Vishay BFC233820123
    Interference Suppression Film Capacitors Radial Potted Type
  • Vishay BFC233820152
    Interference Suppression Film Capacitors Radial Potted Type

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