W4NXE8C-SD00 Datasheet PDF
Constructeur | Emballage | Description | Température | |
---|---|---|---|---|
Cree | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W4NXE8C-SD00 PDF | Min°C | Max°C |
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