W4TXE0X-0D00 FICHE TECHNIQUE,CIRCUIT,LA FONCTION

W4TXE0X-0D00 Datasheet PDF

Constructeur	Emballage	Description	PDF	Température
Cree		Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	W4TXE0X-0D00 PDF	Min°C \| Max°C

Cree W4TXE0X-0D00
Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition