K4E660812B-TC-6 FICHE TECHNIQUE,CIRCUIT,LA FONCTION
K4E660812B-TC-6 Datasheet PDF
Constructeur | Emballage | Description | PDF | Température |
Samsung | TSOP II | 8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
K4E660812B-TC-6 PDF
| Min°C | Max°C |
- Samsung semiconductor K4E660812B
8bit CMOS Dynamic with Extended Data - Samsung K4E660812B-JC-45
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - Samsung K4E660812B-JC-5
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - Samsung K4E660812B-JC-6
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - Samsung K4E660812B-JCL-5
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - Samsung K4E660812B-JCL-6
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - Samsung K4E660812B-TC-45
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - Samsung K4E660812B-TC-5
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - Samsung K4E660812B-TC-6
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - Samsung K4E660812B-TCL-45
8M x 8bit CMOS dynamic RAM with extended data out, 45ns - Samsung K4E660812B-TCL-5
8M x 8bit CMOS dynamic RAM with extended data out, 50ns - Samsung K4E660812B-TCL-6
8M x 8bit CMOS dynamic RAM with extended data out, 60ns