Semiconductor Fiche technique

T10B120T FICHE TECHNIQUE,CIRCUIT,LA FONCTION

T10B120T Datasheet PDF

ConstructeurEmballageDescriptionPDFTempérature
LittelfuseT10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). T10B120T PDF
Min°C | Max°C


© 2025 - Semiconductor Fiche technique Plan du site
Español 中文 Português Русский 日本語 Deutsch العربية Français 한국어 Italiano Norsk Svenska Български Polski Dansk Suomi Nederlands Česky Hrvatski Română Ελληνική हिन्दी Philippine latviešu lietuvių српски Slovenski slovenskom українська עברית Indonesia Việt Nam